unisonic technologies co., ltd MJE13009-Q preliminary npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2015 unisonic technologies co., ltd qw-r223-026.a npn bipolar power transistor for switching power supply applications ? description the utc MJE13009-Q is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. it is particularly suited for 115 and 220 v switch mode applications. ? features * v ceo(sus) 400v * 700v blocking capability ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing mje13009l-q-ta3-t mje13009g-q-ta3-t to-220 b c e tube note: pin assignment: e: emitter c: collector b: base (1) t: tube (2) ta3: to-220 (3) l: lead free, g: halogen free and lead free mje13009l-q-ta3-t (1)packing type (2)package type (3)green package ? marking
MJE13009-Q preliminary npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r223-026.a ? absolute maximum rating parameter symbol ratings unit collector-emitter sustaining voltage v ceo 400 v collector-emitter breakdown voltage v cbo 700 v emitter-base voltage v ebo 9.0 v continuous i c 8.0 a collector current peak (1) i cm 16 a continuous i b 4.0 a base current peak (1) i bm 8.0 a continuous i e 12 a emitter current peak (1) i em 24 a power dissipation (t c = 25c) p d 80 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 62.5 c/w junction to case jc 1.56 c/w note: 1. pulse test: pulse width = 5.0 ms, duty cycle 10%. measurement made with thermocouple contacting the bottom insulated m ounting surface of the package (in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a mounting torque of 6 to 8?lbs. ? electrical characteristics (t c =25c, unless otherwise noted) parameter symbol test conditions min typ max unit collector-emitter sustaining voltage v ceo(sus) i c =10ma, i b =0 400 v v ces =700v 0.1 ma collector cutoff current i cbo v ces =700v, t c =125c 1.0 ma emitter cutoff current i ebo v eb =9.0v, i c =0 100 a h fe1 i c =2.0a, v ce =5.0v 8.0 40 dc current gain h fe2 i c =5.0a, v ce =5.0v 5.0 30 i c =2.0a, i b =0.4a 1.0 v i c =5.0a, i b =1.0a 2.0 v i c =8.0a, i b =2.0a 3.0 v collector-emitter satu ration voltage v ce(sat) i c =5.0a, i b =1.0a, t c =100c 3.0 v i c =2.0a, i b =0.4a 1.2 v i c =5.0a, i b =1.0a 1.6 v base-emitter satura tion voltage v be(sat) i c =5.0a, i b =1.0a, t c =100c 1.5 v current-gain-bandwidth product f t i c =500ma, v ce =10v, f=1.0 mhz 4.0 14 mhz output capacitance c ob v cb =10v, i e =0, f=0.1mhz 80 pf resistive load (table 1) delay time t d 0.025 0.1 s rise time t r 0.5 1.5 s storage time t s 1.8 3.0 s fall time t f v cc =125v, i c =5.0a, i b1 =i b2 =1.0a, t p =25 s, duty cycle 1.0% 0.23 0.7 s note: pulse test: pulse width 300 s, duty cycle 2.0%
MJE13009-Q preliminary npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r223-026.a ? typical thermal response transient thermal resistance, r(t) (normalized) there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of fig. 7 is based on t c = 25c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be debated when t c 25c. second breakdown limitations do not debate the same as thermal lim itations. allowable current at the voltages shown on fig. 7 may be found at any case temperature by using the appr opriate curve on fig. 9. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. use of reverse biased safe operating area data (fig. 8) is discussed in the applications information section.
MJE13009-Q preliminary npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r223-026.a ? test conditions for dynamic performance table 1. test conditions for dynamic performance reverse bias safe operating ar ea and inductive switching resistive switching test circuits circuit values bv ceo (sus) inductive switching rbsoa l=10mh r b2 =8 v cc =20v i c(pk) =100ma l=20mh r b2 =0 v cc =15v r b1 selected for desired i b1 l=500mh r b2 =0 v cc =15volts r b1 selected for desired i b1 v cc =125v r c =25 ? d1=1n5820 or equiv utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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